V. Matias

Optical energies of AlInN epilayers

K. Wang, Robert Martin, D. Amabile et al. · Journal of Applied Physics · 2008 · 63 citations · Full text

Aluminium Nitride, Optical Materials, Engineering +20

Defects induced in GaN by europium implantation

M. Mamor, V. Matias, A. Vantomme et al. · Applied Physics Letters · 2004 · 27 citations

Wide-bandgap Semiconductor, Electrical Engineering, Europium Implantation +10

Electrical characterization of defects introduced in n-type Ge during indium implantation

F.D. Auret, P.J. Janse van Rensburg, M. Hayes et al. · Applied Physics Letters · 2006 · 18 citations

Point Defects, Engineering, Defect Tolerance +16

Influence of O and C co-implantation on the lattice site of Er in GaN

Bart de Vries, V. Matias, A. Vantomme et al. · Applied Physics Letters · 2004 · 16 citations · Full text

Materials Engineering, Wide-bandgap Semiconductor, Electrical Engineering +13

Electrical characterization of rare-earth implanted GaN

P.J. Janse van Rensburg, F.D. Auret, V. Matias et al. · Physica B Condensed Matter · 2009 · 14 citations

Electrical Engineering, Engineering, Applied Physics +2