Applied Physics Letters · 1983 · 94 citations · 6 references
Natural SciencesMaterials SciencePhysicsCondensed Matter PhysicsSemiconductor MaterialsSolid State PhysicsAb Initio MethodsDisordered SystemsElectronic Band StructureElectronic Structure Of SolidsElectronic Transport ModelingSemiconductor PhysicsAlloyingDisordered SemiconductorsElectron ScatteringElectronic Density Of StatesElectronic Transport In Disordered SystemsModulation DopingScattering
We present the results of self-consistent variational calculations for the energy levels and wave functions of modulation-doped InP-In(Ga)As heterojunctions. With the variational wave functions we calculate the electron scattering by alloy disorder. Retaining the bulk In(Ga)As value (∼0.6 eV) for the alloy disorder potential the mobility limited by alloy disorder is only ∼2×105 cm2/Vs for ne ∼3×1011 cm−2.
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Negative Field-Effect Mobility on (100) Si Surfaces
F. F. Fang, W. E. Howard · Physical Review Letters · 1966 · 525 citations