Self-Consistent Results for a GaAs/Al_<i>x</i>Ga_1-<i>x</i>As Heterojunciton. II. Low Temperature Mobility

Abstract

The low temperature mobility is calculated in a two-dimensional system at a GaAs/Al x Ga 1- x As heterojunction. Scattering mechanisms are assumed to be the Coulomb scattering from ionized donors in the Al x Ga 1- x As layer, interface roughness, and scattering caused by alloy disorder present in the Al x Ga 1- x As layer. The calculated mobility for the Coulomb scattering explains recent experimental results. The interface roughness and the alloy scattering can play a role at high electron concentrations (∼10 12 cm -2 ).