Journal of the Physical Society of Japan · 1982 · 366 citations · 28 references
Natural SciencesMaterials SciencePhysicsCondensed Matter PhysicsElectronic MaterialsSemiconductor MaterialsElectronic Transport ModelingSemiconductor Device MaterialsSemiconductor HeterostructuresSemiconductor InterfacesSemiconductor PhysicsTwo-dimensional SemiconductorsCarrier Transport MechanismsDisorder Effects In TransportElectrical Transport PropertiesElectron MobilityElectron Transport In SolidsScatteringTransport In HeterostructuresTransport In Semiconductors
The low temperature mobility is calculated in a two-dimensional system at a GaAs/Al x Ga 1- x As heterojunction. Scattering mechanisms are assumed to be the Coulomb scattering from ionized donors in the Al x Ga 1- x As layer, interface roughness, and scattering caused by alloy disorder present in the Al x Ga 1- x As layer. The calculated mobility for the Coulomb scattering explains recent experimental results. The interface roughness and the alloy scattering can play a role at high electron concentrations (∼10 12 cm -2 ).
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Electronic properties of two-dimensional systems
Tsuneya Ando, A. B. Fowler, Frank Stern · Reviews of Modern Physics · 1982 · 7.4K citations
Natural Sciences, Chemistry, Physics +16
Electron mobilities in modulation-doped semiconductor heterojunction superlattices
R. Dingle, H. L. Störmer, A. C. Gossard et al. · Applied Physics Letters · 1978 · 1.5K citations
Negative Field-Effect Mobility on (100) Si Surfaces
F. F. Fang, W. E. Howard · Physical Review Letters · 1966 · 525 citations