Publication | Closed Access
Self-Consistent Results for a GaAs/Al<sub><i>x</i></sub>Ga<sub>1-<i>x</i></sub>As Heterojunction. I. Subband Structure and Light-Scattering Spectra
300
Citations
22
References
1982
Year
Wide-bandgap SemiconductorEngineeringElectron DiffractionStrongly Correlated Electron SystemsLocal Density-functional ApproximationLight-scattering SpectraElectronic StructureElectron PhysicSemiconductorsElectron SpectroscopyOptical PropertiesSubband StructureQuantum MaterialsCompound SemiconductorI. Subband StructurePhysicsSelf-consistent ResultsNatural SciencesTwo-dimensional Electron SystemApplied PhysicsCondensed Matter PhysicsOptoelectronics
The subband structure of a two-dimensional electron system at a GaAs/Al x Ga 1- x As heterojunction interface is calculated. Many-body exchange and correlation effects are taken into account in the local density-functional approximation. They are shown to be unimportant but not negligibly small. Spectra of light scatterings are also calculated. Results are in reasonable agreement with existing experiments.
| Year | Citations | |
|---|---|---|
Page 1
Page 1