Journal of Applied Physics · 1978 · 58 citations · 6 references
EngineeringMaterials EngineeringMaterials ScienceCrystal StructureElectronic MaterialsSemiconductor MaterialsAmorphous Electronic MaterialsIon ImplantationRadiation Damage In MaterialsSemiconductor DefectsSemiconductor Device MaterialsSilicon MaterialsAmorphous RegionsChannelingCrystalline SiliconIon Beam IrradiationIon Implantation EffectsLattice DamagePower Density
Backscattering of a 2.0-MeV He+ ion beam and channeling-effect techniques have been used to investigate the lattice location of Te in laser-annealed Te-implanted silicon. After Q-switched ruby-laser irradiation, an attenuation of 85% has been found in the Te signal for beam incidence along the 〈111〉 and the 〈110〉 axes of a Si crystal implanted with 400-keV Te to a dose of 1015 ions/cm2. The damaged amorphous layer recrystallizes completely after a 50-MW/cm2 pulse of 50-nsec duration for 〈111〉-oriented specimens; a lower power density is sufficient for 〈100〉 specimens. The Te profile broadens and shows accumulation at the Si surface for a power density of 60 MW/cm2 on a 〈100〉 specimen.
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Ion-implanted semiconductor devices
D.H. Lee, J. W. Mayer · Proceedings of the IEEE · 1974 · 45 citations