Regrowth behavior of ion-implanted amorphous layers on 〈111〉 silicon

Abstract

The regrowth of Si crystal from amorphous layers created by Si implantation into 〈111〉, 〈100〉, and 〈110〉 Si was studied. Channeling effect measurements show that the growths on the 〈110〉 and 〈100〉 substrates are epitaxial and linear with time. For the 〈111〉 samples the growth at 550 °C was significantly slower and nonlinear in time and the regrown layer contained a high concentration of defects. TEM micrographs indicate the presence of stacking faults and/or microtwins in the 〈111〉 samples.