T. E. Seidel

Dominant Influence of Beam-Induced Interface Rearrangement on Solid-Phase Epitaxial Crystallization of Amorphous Silicon

J. S. Williams, R. G. Elliman, W. L. Brown et al. · Physical Review Letters · 1985 · 209 citations

Materials Science, Ion Implantation, Epitaxial Growth +15

Dependence of residual damage on temperature during Ar+ sputter cleaning of silicon

J. C. Bean, G. E. Becker, P. M. Petroff et al. · Journal of Applied Physics · 1977 · 183 citations · Full text

Materials Science, Ion Implantation, Engineering +15

Direct comparison of ion−damage gettering and phosphorus−diffusion gettering of Au in Si

T. E. Seidel, Ronald L. Meek, A. G. Cullis · Journal of Applied Physics · 1975 · 133 citations

Materials Engineering, Materials Science, Ion Implantation +15

Comparative study of annealed neon-, argon-, and krypton-ion implantation damage in silicon

A. G. Cullis, T. E. Seidel, Ronald L. Meek · Journal of Applied Physics · 1978 · 112 citations

Engineering, Integrated Circuits, Vacuum Device +17

Copper-Based Metallization in ULSI Structures: Part II: Is Cu Ahead of Its Time as an On-Chip Interconnect Material?

Jian Li, T. E. Seidel, Jim W. Mayer · MRS Bulletin · 1994 · 103 citations

Materials Engineering, Materials Science, Electromigration Technique +13