Flash lamp annealing of ion implanted silicon

Abstract

Abstract To prove the feasibility of flash-lamp annealing of ion-implanted silicon, theoretical and experimental investigations have been performed. Detailed temperature calculations indicate that depending on the pulse length two different time-temperature regimes exist. In the heat conduction regime only the near surface region of the wafer is heated up to the necessary temperature and the annealing takes place in a time comparable to the pulse length. In the heat radiation regime the whole volume is heated nearly uniformly up to a maximum temperature and the heat is stored for a longer time. The thermally induced stiesses in the wafer are also calculated and compared to the temperature dependent yield stress. The basic experimental results have been obtained using As-implanted ⟨100⟩-silicon. The pulse length of the flash was 10 ms corresponding to an annealing in the heat radiation regime. The samples have been analyzed by Rutherford backscattering, sheet resistivity measurements and transmission electron microscopy. It has been found that the annealing characteristics are similar to that of conventional thermal annealing.