OMVPE growth of InP using TMIn

High purity GaAs prepared from trimethylgallium and arsine

P.D. Dapkus, H. M. Manasevit, K. L. Hess et al. · Journal of Crystal Growth · 1981 · 197 citations

Engineering, Materials Engineering, Materials Science +10

Thermodynamic aspects of organometallic vapor phase epitaxy

G. B. Stringfellow · Journal of Crystal Growth · 1983 · 147 citations

Natural Sciences, Chemistry, Materials Science +14

A new approach to MOCVD of indium phosphide and gallium-indium arsenide

R.H. Moss, Julian Evans · Journal of Crystal Growth · 1981 · 120 citations

Engineering, Materials Engineering, Materials Science +14

Growth of high-purity GaAs epilayers by MOCVD and their applications to microwave MESFET's

T. Nakanisi, Takashi Udagawa, Atsushi Tanaka et al. · Journal of Crystal Growth · 1981 · 104 citations

Engineering, Electrical Engineering, Materials Science +12

The Use of Metalorganics in the Preparation of Semiconductor Materials

H. M. Manasevit, W. I. Simpson · Journal of The Electrochemical Society · 1973 · 100 citations

Engineering, Chemistry, Materials Science +12