Selective area growth of indium phosphide based heterostructures by metalorganic molecular beam epitaxy

The microscopy of semiconducting materials

A.G. Cullis · Journal of Microscopy · 1980 · 284 citations

Natural Sciences, Materials Science, Physics +10

Molecular beam epitaxial growth of GaAs using trimethylgallium as a Ga source

Eisuke Tokumitsu, Yoshimitsu Kudou, Makoto Konagai et al. · Journal of Applied Physics · 1984 · 150 citations

Engineering, Electrical Engineering, Materials Science +17

Selective epitaxial growth of gallium arsenide by molecular beam epitaxy

A. Okamoto, K. Ohata · Applied Physics Letters · 1987 · 63 citations

Engineering, Electrical Engineering, Materials Science +13

Selective area growth of InP/InGaAs multiple quantum well laser structures by metalorganic molecular beam epitaxy

D. A. Andrews, M.A.Z. Rejman-Greene, Bonnie J. Wakefield et al. · Applied Physics Letters · 1988 · 47 citations

Engineering, Materials Engineering, Materials Science +16

Growth of high quality indium phosphide from metalorganic sources by molecular beam epitaxy

D. A. Andrews, S.T. Davey, C. G. Tuppen et al. · Applied Physics Letters · 1988 · 32 citations

Engineering, Materials Engineering, Materials Science +15