A. Okamoto

In surface segregation and growth-mode transition during InGaAs growth by molecular-beam epitaxy

H. Toyoshima, T. Niwa, J. Yamazaki et al. · Applied Physics Letters · 1993 · 81 citations

Engineering, Nanoelectronics, Ingaas Growth +16

Selective epitaxial growth of gallium arsenide by molecular beam epitaxy

A. Okamoto, K. Ohata · Applied Physics Letters · 1987 · 63 citations

Materials Science, Semiconductors, Materials Engineering +15

Chemical dry etching of GaAs and InP by Cl2 using a new ultrahigh-vacuum dry-etching molecular-beam-epitaxy system

Naoki Furuhata, Hiroshi Miyamoto, A. Okamoto et al. · Journal of Applied Physics · 1989 · 50 citations

Engineering, Mbe Chamber, Nanoelectronics +16

Design and performance of traveling-wave tubes using field emitter array cathodes

Hideo Makishima, S. Miyano, H. Imura et al. · Applied Surface Science · 1999 · 50 citations

Accelerator Technology, Electrical Engineering, Engineering +5

Cl2 chemical dry etching of GaAs under high vacuum conditions—Crystallographic etching and its mechanism

Naoki Furuhata, Hiroshi Miyamoto, A. Okamoto et al. · Journal of Electronic Materials · 1990 · 44 citations

Materials Science, Semiconductors, Engineering +3