High carrier activation of Mg ion-implanted GaN by conventional rapid thermal annealing

T. Niwa, Takahiro Fujii, Tohru OKA

Applied Physics Express

Materials ScienceWide-bandgap SemiconductorElectrical EngineeringIon ImplantationEngineering +9

In surface segregation and growth-mode transition during InGaAs growth by molecular-beam epitaxy

H. Toyoshima, T. Niwa, J. Yamazaki, +1

Applied Physics Letters

EngineeringNanoelectronicsIngaas GrowthSegregation ModelMolecular Beam Epitaxy +14

Backreflection x-ray standing waves and crystal truncation rods as structure probe for epilayer–substrate systems

Hidetoshi Hashizume, Munehiro Sugiyama, T. Niwa, +2

Review of Scientific Instruments

X-ray CrystallographyEngineeringHeteroepitaxial Casrf2 CrystalsCrystal Truncation RodIi-vi Semiconductor +16

Suppression of In surface segregation and growth of modulation-doped <i>N</i>-AlGaAs/InGaAs/GaAs structures with a high In composition by molecular-beam epitaxy

Hideo Toyoshima, T. Niwa, J. Yamazaki, +1

Journal of Applied Physics

SemiconductorsElectrical EngineeringEpitaxial GrowthMolecular-beam EpitaxyIngaas Channel +12

50-GHz-bandwidth baseband amplifiers using GaAs-based HBTs

Yoshishige Suzuki, H. Shimawaki, Y. Amamiya, +4

IEEE Journal of Solid-State Circuits

Electrical EngineeringMillimeter Wave TechnologyEngineeringRf SemiconductorBaseband Amplifiers +10

A low phase-noise 38-GHz HBT MMIC oscillator utilizing a novel transmission line resonator

K. Hosoya, Shin‐ichi Tanaka, Y. Amamiya, +3

EngineeringRadio FrequencyOscillatorsHigh-frequency DeviceTransmission Line Resonator +4

A 1.4-dB-NF variable-gain LNA with continuous control for 2-GHz-band mobile phones using InGaP emitter HBTs

Yuuichi Aoki, Masahiro Fujii, Satoshi Ohkubo, +6

Electrical EngineeringEngineeringRf SemiconductorRadio FrequencyHigh-frequency Device +10

A low phase-noise 18-GHz HBT oscillator utilizing a (λ/4±δ) open stubs resonator

K. Hosoya, Shin‐ichi Tanaka, Y. Amamiya, +2

EngineeringRadio FrequencyOscillatorsOpen Stubs ResonatorTransmission Line Resonator +6

RF HBT oscillators with low-phase noise and high-power performance utilizing a (/spl lambda//4/spl plusmn//spl delta/) open-stubs resonator

K. Hosoya, Shin‐ichi Tanaka, Y. Amamiya, +3

IEEE Transactions on Circuits and Systems I Fundamental Theory and Applications

Open-stubs ResonatorEngineeringRf SemiconductorOscillatorsHigh-frequency Device +13

Structure of fluoride/GaAs(111) heteroepitaxial interfaces

T. Niwa, Munehiro Sugiyama, Takumi Nakahata, +2

Surface Science

EngineeringApplied PhysicsCondensed Matter PhysicsMultilayer HeterostructuresHeteroepitaxial Interfaces +2