T. Niwa

High carrier activation of Mg ion-implanted GaN by conventional rapid thermal annealing

T. Niwa, Takahiro Fujii, Tohru OKA · Applied Physics Express · 2017 · 93 citations

Materials Science, Wide-bandgap Semiconductor, Electrical Engineering +11

In surface segregation and growth-mode transition during InGaAs growth by molecular-beam epitaxy

H. Toyoshima, T. Niwa, J. Yamazaki et al. · Applied Physics Letters · 1993 · 81 citations

Engineering, Nanoelectronics, Ingaas Growth +16

Backreflection x-ray standing waves and crystal truncation rods as structure probe for epilayer–substrate systems

Hidetoshi Hashizume, Munehiro Sugiyama, T. Niwa et al. · Review of Scientific Instruments · 1992 · 53 citations

X-ray Crystallography, Engineering, Heteroepitaxial Casrf2 Crystals +18

Suppression of In surface segregation and growth of modulation-doped <i>N</i>-AlGaAs/InGaAs/GaAs structures with a high In composition by molecular-beam epitaxy

Hideo Toyoshima, T. Niwa, J. Yamazaki et al. · Journal of Applied Physics · 1994 · 53 citations

Semiconductors, Electrical Engineering, Epitaxial Growth +14

50-GHz-bandwidth baseband amplifiers using GaAs-based HBTs

Yoshishige Suzuki, H. Shimawaki, Y. Amamiya et al. · IEEE Journal of Solid-State Circuits · 1998 · 25 citations

Electrical Engineering, Millimeter Wave Technology, Engineering +12