High carrier activation of Mg ion-implanted GaN by conventional rapid thermal annealing

Abstract

A high activation ratio of Mg ion implantation by conventional rapid thermal annealing (RTA) was demonstrated. To obtain the high activation ratio of Mg ion implantation, the dependence of hole concentration on Mg dose was investigated. A maximum hole concentration and a high activation ratio of 2.3% were obtained at a Mg dose of 2.3 × 1014 cm−2 between 9.2 × 1013 and 2.3 × 1015 cm−2. The ratio is, to the best of our knowledge, the highest ever obtained by conventional RTA.