Selective area growth of InP/InGaAs multiple quantum well laser structures by metalorganic molecular beam epitaxy

Abstract

Selective area growth of InP/InGaAs multiple quantum well laser structures has been demonstrated in openings defined in Si3 N4 layers on InP substrates. Growth was achieved, by metalorganic molecular beam epitaxy, in openings as small as 3 μm wide, but no growth occurred on the dielectric coating. Cathodoluminescence from individual laser stripes was observed at 300 K with a wavelength determined to be 1.57 μm and at 100 K with a wavelength of 1.46 μm.