Japanese Journal of Applied Physics · 1991 · 27 citations · 12 references
EngineeringMaterials EngineeringMaterials ScienceSemiconductor DevicesSemiconductor MaterialsThin FilmsMetal-semiconductor ContactsSemiconductor Device MaterialsSemiconductor InterfacesSemiconductor PhysicsSemiconductor SurfacesSemiconductor Thin FilmsAdhesion PropertiesContact MaterialsDiamond SemiconductorsEpitaxial MaterialsFilm AdhesionRectifying ContactsThermal Evaporation
The first results pertaining to the fabrication of high-temperature rectifying contacts using heteroepitaxial Ni films deposited on natural p-type semiconducting diamond substrates are reported. The contact diodes were deposited at 500°C by the thermal evaporation of Ni from a W filament in ultra-high vacuum. The epitaxial nature of the deposited Ni layers has been established from an inspection of in situ low-energy electron diffraction (LEED) patterns. The Ni films exhibit excellent adhesion properties with the underlying diamond substrate. As evidenced by current-voltage ( I - V ) measurements stable rectifying characteristics for the Ni/diamond contacts were observed in the 25-400°C temperature range.
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