T. P. Humphreys

<i>I</i> <i>n</i> <i>s</i> <i>i</i> <i>t</i> <i>u</i> growth rate measurements during molecular beam epitaxy using an optical pyrometer

A. J. SpringThorpe, T. P. Humphreys, Abdul Majeed et al. · Applied Physics Letters · 1989 · 68 citations

Engineering, Electrical Engineering, Materials Science +17

Effectiveness of strained-layer superlattices in reducing defects in GaAs epilayers grown on silicon substrates

N. A. El-Masry, J. C. L. Tarn, T. P. Humphreys et al. · Applied Physics Letters · 1987 · 63 citations

Natural Sciences, Materials Science, Physics +17

Chemical vapor deposition of diamond films from water vapor rf-plasma discharges

R. A. Rudder, G. Hudson, J. B. Posthill et al. · Applied Physics Letters · 1992 · 48 citations

Natural Sciences, Materials Engineering, Materials Science +10

The role of atomic hydrogen and its influence on the enhancement of secondary electron emission from C(001) surfaces

T. P. Humphreys, R. E. Thomas, D.P. Malta et al. · Applied Physics Letters · 1997 · 42 citations

Natural Sciences, Materials Engineering, Materials Science +17

Defect reduction in GaAs grown by molecular beam epitaxy using different superlattice structures

S. M. Bedair, T. P. Humphreys, N. A. El-Masry et al. · Applied Physics Letters · 1986 · 41 citations

Engineering, Materials Engineering, Materials Science +17