J. C. L. Tarn

Interactions of dislocations in GaAs grown on Si substrates with InGaAs-GaAsP strained layered superlattices

N. A. El-Masry, J. C. L. Tarn, N.H. Karam · Journal of Applied Physics · 1988 · 68 citations

Engineering, Semiconductor Nanostructures, Semiconductors +17

Effectiveness of strained-layer superlattices in reducing defects in GaAs epilayers grown on silicon substrates

N. A. El-Masry, J. C. L. Tarn, T. P. Humphreys et al. · Applied Physics Letters · 1987 · 63 citations

Engineering, Silicon Substrates, Strained-layer Superlattices +18

Combined effect of strained-layer superlattice and annealing in defects reduction in GaAs grown on Si substrates

N. A. El-Masry, J. C. L. Tarn, S. M. Bedair · Applied Physics Letters · 1989 · 40 citations

Engineering, High Defect Density, Semiconductor Device +19

Recent progress in atomic layer epitaxy of III–V compounds

S. M. Bedair, B. T. McDermott, Y. Ide et al. · Journal of Crystal Growth · 1988 · 30 citations

Oxide Heterostructures, Engineering, Applied Physics +3

Observation of antiphase domain boundaries in GaAs on silicon by transmission electron microscopy

J. B. Posthill, J. C. L. Tarn, Kalyan Das et al. · Applied Physics Letters · 1988 · 29 citations

Semiconductors, Semiconductor Technology, Electrical Engineering +15