Applied Physics Letters · 1997 · 20 citations · 12 references
EngineeringMaterials EngineeringMaterials ScienceElectronic MaterialsSemiconductor DevicesSemiconductor MaterialsDopingEtching ProcessesIon ImplantationP-n JunctionsSemiconductor HeterostructuresSemiconductor PhysicsHeterojunctionsLaser MicroscopyLaser Scanning MicroscopyMicroscopyProcessing ConditionsReactive Ion EtchingSemiconductor JunctionsType Conversion
Laser-beam-induced-current measurements have been used to characterize the extent of reactive ion etching (RIE) induced type conversion in vacancy-doped p-type Hg0.69Cd0.31Te. The technique allows the spatial extent of RIE induced type conversion to be determined and the donor level concentration profile within the n-type converted region to be estimated. For the RIE processing conditions used (410 mT, CH4/H2, 0.4 W/cm2) and an etch depth of 0.2 μm, n-type conversion extending ∼1.5 μm into the semiconductor was observed. The simple and powerful approach developed in this work is of general application to the study of semiconductor junctions, and can be applied to a range of processing techniques used in the formation of p-n junctions in HgCdTe (e.g., epitaxially grown heterojunctions, ion implantation, ion milling and Hg in-diffusion).
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Type conversion of p-(HgCd)Te using and Ar reactive ion etching
E. Belas, J. Franc, A.L. Tóth et al. · Semiconductor Science and Technology · 1996 · 61 citations