Type conversion of p-(HgCd)Te using and Ar reactive ion etching

Abstract

Hydrogen/methane gas mixtures and pure argon were used for reactive ion etching (RIE) of ( and 0.28). The effect of the ratio on the depth of the etched surface and the depth of the p - n junction created under the etched surface were studied for the RIE process. It was found that the etch depth reaches a maximum at an ratio and the depth of the p - n junction decreases with increasing fraction in the mixture. The roughness of the etched surface is smallest using a gas mixture with a small amount of (20 - 30%). For the pure Ar RIE process the etch and p - n junction depths were studied as functions of etch time, Ar pressure and rf power. Clear evidence for the creation of p - n junctions using various kinds of Ar RIE processes is found.