P. Höschl

The structure and electronic properties of semiconducting glasses based on CdAs2

Ladislav Červinka, A. Hrubý, M. Matyáš et al. · Journal of Non-Crystalline Solids · 1970 · 73 citations

Materials Science, Ii-vi Semiconductor, Engineering +6

Type conversion of p-(HgCd)Te using and Ar reactive ion etching

E. Belas, J. Franc, A.L. Tóth et al. · Semiconductor Science and Technology · 1996 · 61 citations

Engineering, Vacuum Device, Type Conversion +17

High-temperature defect structure of Cd- and Te-rich CdTe

R. Grill, J. Franc, P. Höschl et al. · IEEE Transactions on Nuclear Science · 2002 · 55 citations

Engineering, Tellurium Atom Fraction, Ii-vi Semiconductor +16

CdTe and CdZnTe crystals for room temperature gamma-ray detectors

J. Franc, P. Höschl, E. Belas et al. · Nuclear Instruments and Methods in Physics Research Section A Accelerators Spectrometers Detectors and Associated Equipment · 1999 · 47 citations

Cdznte Crystals, Ii-vi Semiconductor, Engineering +6

Deep level defects in CdTe materials studied by thermoelectric effect spectroscopy and photo-induced current transient spectroscopy

H. Elhadidy, J. Franc, P. Moravec et al. · Semiconductor Science and Technology · 2007 · 41 citations

Engineering, Capture Cross Section, Thermoelectric Effect Spectroscopy +20