J.F. Siliquini

Improved device technology for epitaxial Hg_1-xCd_xTe infrared photoconductor arrays

J.F. Siliquini, K. Fynn, Brett Nener et al. · Semiconductor Science and Technology · 1994 · 23 citations

Engineering, Materials Engineering, Materials Science +16

Scanning laser microscopy of reactive ion etching induced <i>n</i>-type conversion in vacancy-doped <i>p</i>-type HgCdTe

J.F. Siliquini, J.M. Dell, C.A. Musca et al. · Applied Physics Letters · 1997 · 20 citations

Engineering, Materials Engineering, Materials Science +17

Mercury annealing of reactive ion etching induced p- to n-type conversion in extrinsically doped p-type HgCdTe

E. P. Smith, J.F. Siliquini, C.A. Musca et al. · Journal of Applied Physics · 1998 · 20 citations

Engineering, Materials Engineering, Materials Science +17

Characterisation of reactive-ion-etching-induced type-conversion in p-type HgCdTe using scanning laser microscopy

J.F. Siliquini, J.M. Dell, C.A. Musca et al. · Journal of Crystal Growth · 1998 · 19 citations

Engineering, Materials Engineering, Materials Science +14

Estimation of doping density in HgCdTe p-n junctions using scanning laser microscopy

J.F. Siliquini, J.M. Dell, C.A. Musca et al. · Applied Physics Letters · 1998 · 19 citations

Engineering, Materials Engineering, Materials Science +17