Reduction of defect density by rapid thermal annealing in GaAsBi studied by time-resolved photoluminescence

S. Mazzucato, Poonyasiri Boonpeng, H. Carrère, David Lagarde, Alexandre Arnoult, Guy Lacoste, T. Zhang, A. Balocchi, T. Amand, X. Marie,

Semiconductor Science and Technology · 2013 · 48 citations · 19 references

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