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Reduction of defect density by rapid thermal annealing in GaAsBi studied by time-resolved photoluminescence

DOI

47

Citations

19

References

2013

Year

S. Mazzucato, Poonyasiri Boonpeng, H. Carrère, David Lagarde, Alexandre Arnoult, Guy Lacoste, T. Zhang, A. Balocchi, T. Amand, X. Marie,
Semiconductor Science and Technology

Abstract

International audience

References

YearCitations

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