Guy Lacoste

Reduction of defect density by rapid thermal annealing in GaAsBi studied by time-resolved photoluminescence

S. Mazzucato, Poonyasiri Boonpeng, H. Carrère et al. · Semiconductor Science and Technology · 2013 · 48 citations

Engineering, Materials Engineering, Materials Science +17

S-shaped behaviour of the temperature-dependent energy band gap in dilute nitrides

S. Mazzucato, Richard J. Potter, Ayşe Erol et al. · Physica E Low-dimensional Systems and Nanostructures · 2003 · 38 citations

Natural Sciences, Materials Science, Physics +11

Interaction Strength between the Highly Localised Nitrogen States and the Extended Semiconductor Matrix States in GaInNAs

Richard J. Potter, N. Balkan, X. Marie et al. · physica status solidi (a) · 2001 · 37 citations

Engineering, Materials Engineering, Materials Science +17

Electron spin dynamics and g-factor in GaAsBi

S. Mazzucato, T. T. Zhang, H. Carrère et al. · Applied Physics Letters · 2013 · 35 citations

Natural Sciences, Materials Science, Physics +17

Molecular beam epitaxy and properties of GaAsBi/GaAs quantum wells grown by molecular beam epitaxy: effect of thermal annealing

Hajer Makhloufi, Poonyasiri Boonpeng, S. Mazzucato et al. · Nanoscale Research Letters · 2014 · 25 citations · Full text

Engineering, Materials Science, Physics +17