MBE P-on-n Hg1−xCdxTe heterostructure detectors on silicon substrates

Molecular beam epitaxial growth of CdTe and HgCdTe on Si (100)

R. Sporken, S. Sivananthan, K. K. Mahavadi et al. · Applied Physics Letters · 1989 · 107 citations

Engineering, Materials Engineering, Materials Science +17

Structure of CdTe(111)B grown by MBE on misoriented Si(001)

Y. P. Chen, S. Sivananthan, J. P. Faurie · Journal of Electronic Materials · 1993 · 62 citations

Natural Sciences, Materials Engineering, Materials Science +9

Numerical simulation of HgCdTe detector characteristics

Gail Williams, R. E. De Wames · Journal of Electronic Materials · 1995 · 54 citations

Engineering, Computational Engineering, Electrical Engineering +14

Uniform low defect density molecular beam epitaxial HgCdTe

J. Bajaj, J. M. Arias, M. Zandian et al. · Journal of Electronic Materials · 1996 · 49 citations

Engineering, Materials Engineering, Materials Science +10

Planar p-on-n HgCdTe heterostructure infrared photodiodes on Si substrates by molecular beam epitaxy

Nibir K. Dhar, M. Zandian, J. G. Pasko et al. · Applied Physics Letters · 1997 · 47 citations · Full text

Engineering, Electrical Engineering, Materials Science +17