Nonlinear thermal characteristics of silicon carbide devices

Determination of the thermal diffusivity and conductivity of monocrystalline silicon carbide (300-2300 K)

Ove Nilsson, Harald Mehling, Ronny Horn et al. · High Temperatures-High Pressures · 1997 · 152 citations · Full text

Engineering, Materials Engineering, Materials Science +16

Maximum Junction Temperatures of SiC Power Devices

Kuang Sheng · IEEE Transactions on Electron Devices · 2009 · 101 citations

Engineering, Electrical Engineering, Materials Science +17

Studies on the Nonlinearity Effects in Dynamic Compact Model Generation of Packages

M. Rencz, Vladimı́r Székely · IEEE Transactions on Components and Packaging Technologies · 2004 · 70 citations

Engineering, Systems Engineering, Heat Transfer +14

Junction temperature dynamics of power MOSFET and SiC diode

Sung Gyu Pyo, Kuang Sheng · 2009 · 30 citations

Engineering, Electrical Engineering, Microelectronics +16

Novel electro-thermal coupling simulation technique for dynamic analysis of HV (hybrid vehicle) inverter

Takashi Kojima, Y. Nishibe, Yasushi Yamada et al. · 2006 · 29 citations

Engineering, Automotive Engineering, Electrical Engineering +17