Comparative study of large grains and high-performance TFTs in low-temperature crystallized LPCVD and APCVD amorphous silicon films

Recrystallization of amorphized polycrystalline silicon films on SiO2: Temperature dependence of the crystallization parameters

R.B. Iverson, R. Reif · Journal of Applied Physics · 1987 · 359 citations · Full text

Natural Sciences, Materials Engineering, Materials Science +17

Large grain polycrystalline silicon by low-temperature annealing of low-pressure chemical vapor deposited amorphous silicon films

Miltiadis K. Hatalis, David W. Greve · Journal of Applied Physics · 1988 · 318 citations

Natural Sciences, Materials Engineering, Materials Science +17

Grain Growth Mechanism of Heavily Phosphorus‐Implanted Polycrystalline Silicon

Yasuo Wada, Shigeru Nishimatsu · Journal of The Electrochemical Society · 1978 · 246 citations

Engineering, Materials Engineering, Materials Science +17

Growth and Physical Properties of LPCVD Polycrystalline Silicon Films

G. Harbeke, L. Krausbauer, E. F. Steigmeier et al. · Journal of The Electrochemical Society · 1984 · 245 citations

Natural Sciences, Materials Engineering, Materials Science +17

Crystallization in amorphous silicon

K. Zellama, P. Germain, S. Squelard et al. · Journal of Applied Physics · 1979 · 204 citations

Natural Sciences, Materials Engineering, Materials Science +17