Low-temperature activation of As in Hg1−xCdxTe(211) grown on Si by molecular beam epitaxy

Electrical activity, mode of incorporation and distribution coefficient of group V elements in Hg1−xCdxTe grown from tellurium rich liquid phase epitxial growth solutions

H. R. Vydyanath, J. Ellsworth, C. Devaney · Journal of Electronic Materials · 1987 · 73 citations

Natural Sciences, Materials Engineering, Materials Science +11

Infinite-melt vertical liquid-phase epitaxy of HgCdTe from Hg solution: Status and prospects

Tse Tung · Journal of Crystal Growth · 1988 · 72 citations

Engineering, Materials Engineering, Materials Science +12

The behavior of doped Hg1−xCdxTe epitaxial layers grown from Hg-rich melts

M. H. Kalisher · Journal of Crystal Growth · 1984 · 62 citations

Natural Sciences, Materials Science, Physics +14

Modeling of arsenic activation in HgCdTe

M. A. Berding, A. Sher, Mark van Schilfgaarde et al. · Journal of Electronic Materials · 1998 · 52 citations

Natural Sciences, Chemistry, Materials Science +11

The doping of mercury cadmium telluride grown by molecular‐beam epitaxy

M. Boukerche, P. S. Wijewarnasuriya, S. Sivananthan et al. · Journal of Vacuum Science & Technology A Vacuum Surfaces and Films · 1988 · 51 citations

Engineering, Materials Engineering, Materials Science +11