V. Nathan

Type-II M structure photodiodes: an alternative material design for mid-wave to long wavelength infrared regimes

B.-M. Nguyen, M. Razeghi, V. Nathan et al. · Proceedings of SPIE, the International Society for Optical Engineering/Proceedings of SPIE · 2007 · 90 citations

Engineering, Materials Engineering, Materials Science +17

Gate-induced drain leakage current in MOS devices

V. Nathan, Naresh C. Das · IEEE Transactions on Electron Devices · 1993 · 42 citations

Engineering, Electrical Engineering, Microelectronics +16

High-performance type-II InAs/GaSb superlattice photodiodes with cutoff wavelength around 7 μm

Yajun Wei, Andrew Hood, Haiping Yau et al. · Applied Physics Letters · 2005 · 38 citations

Engineering, Electrical Engineering, Materials Science +17

HgCdTe/Si materials for long wavelength infrared detectors

S. M. Johnson, A. A. Buell, M. F. Vilela et al. · Journal of Electronic Materials · 2004 · 36 citations

Engineering, Materials Engineering, Materials Science +14

Recent Advances in LWIR Type-II InAs/GaSb Superlattice Photodetectors and Focal Plane Arrays at the Center for Quantum Devices

Manijeh Razeghi, Darin Hoffman, B.-M. Nguyen et al. · Proceedings of the IEEE · 2009 · 34 citations

Engineering, Materials Engineering, Materials Science +17