Applied Physics Letters · 2005 · 38 citations · 6 references
EngineeringElectrical EngineeringMaterials ScienceOptoelectronicsSemiconductor DevicesSemiconductor MaterialsOptoelectronic MaterialsPhotodetectorsSemiconductor DetectorsSemiconductor Device MaterialsSemiconductor HeterostructuresSemiconductor PhysicsCurrent DensityDark CurrentDark Current ReductionLattice PeriodicityPhotodetectionReverse Bias CharacteristicsSuperlattice MaterialsSuperlattices
We report the most recent result in the area of type-II InAs/GaSb superlattice photodiodes that have a cutoff wavelength around 7 μm at 77 K. Superlattice with a period of 40 Å lattice matched to GaSb was realized using GaxIn1−x type interface engineering technique. Compared with significantly longer period superlattices, we have reduced the dark current density under reverse bias dramatically. For a 3 μm thick structure, using sulfide-based passivation, the dark current density reached 2.6×10−5A∕cm2 at −3 V reverse bias at 77 K. At this temperature the photodiodes have R0A of 9300Ωcm2 and a thermally limited zero bias detectivity of 1×1012cmHz1∕2∕W. The 90%–10% cutoff energy width was only 16.5 meV. The devices did not show significant dark current change at 77 K after three months storage in the atmosphere.
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A new semiconductor superlattice
G.A. Sai-Halasz, Raphael Tsu, L. Esaki · Applied Physics Letters · 1977 · 564 citations
High performance InAs/Ga1-xInxSb superlattice infrared photodiodes
F. Fuchs, U. Weimer, W. Pletschen et al. · Applied Physics Letters · 1997 · 213 citations