MEMORY BEHAVIOR IN A FLOATING-GATE AVALANCHE-INJECTION MOS (FAMOS) STRUCTURE

Abstract

A novel charge-storage structure is described. The floating-gate avalanche-injection MOS (FAMOS) structure is shown to exhibit memory behavior in the form of long-term charge storage on the floating conductive gate of an insulated gate field-effect device. Charge is stored in the floating polysilicon gate by avalanche injection of electrons from an underlying p-n junction.