Study of charge carrier quantization in strained Si-nMOSFETs

Comparative study of phonon-limited mobility of two-dimensional electrons in strained and unstrained Si metal–oxide–semiconductor field-effect transistors

Shinichi Takagi, Judy L. Hoyt, J.J. Welser et al. · Journal of Applied Physics · 1996 · 470 citations

Engineering, Electrical Engineering, Physics +17

Fabrication and analysis of deep submicron strained-Si n-MOSFET's

K. Rim, Judy L. Hoyt, J. F. Gibbons · IEEE Transactions on Electron Devices · 2000 · 361 citations

Engineering, Electrical Engineering, Materials Engineering +17

Quantum device-simulation with the density-gradient model on unstructured grids

Andreas Wettstein, Andreas Schenk, Wolf Fïchtner · IEEE Transactions on Electron Devices · 2001 · 185 citations

Engineering, Electrical Engineering, Physics +17

Strain dependence of the performance enhancement in strained-Si n-MOSFETs

J.J. Welser, Judy L. Hoyt, Shinichi Takagi et al. · 2002 · 160 citations

Engineering, Electrical Engineering, Materials Science +14

Electron transport in strained Si layers on Si1−<i>x</i>Ge<i>x</i> substrates

Th. Vogelsang, K.R. Hofmann · Applied Physics Letters · 1993 · 151 citations

Engineering, Materials Engineering, Materials Science +17