C.D. Nguyen

High-mobility low band-to-band-tunneling strained-Germanium double-gate heterostructure FETs: Simulations

Tejas Krishnamohan, Donghyun Kim, C.D. Nguyen et al. · IEEE Transactions on Electron Devices · 2006 · 97 citations

Electrical Engineering, Engineering, Detailed Btbt Simulations +8

Improved Modified Local Density Approximation for Modeling of Size Quantization in NMOSFETs

Stefan Decker, Christoph Jungemann, B. Meinerzhagen et al. · TechConnect Briefs · 2001 · 25 citations

Device Modeling, Semiconductors, Electrical Engineering +15

Hydrodynamic modeling of RF noise in CMOS devices

Christoph Jungemann, B. Neinhüs, C.D. Nguyen et al. · 2004 · 17 citations

Electrical Engineering, Engineering, Rf Semiconductor +14

RF performance of 28nm PolySiON and HKMG CMOS devices

Kok Wai Chew, Aniket Agshikar, Maciej Wiatr et al. · 2015 · 16 citations

Electrical Engineering, Engineering, Vlsi Design +13

Study of charge carrier quantization in strained Si-nMOSFETs

C.D. Nguyen, Anh-Tuan Pham, Christoph Jungemann et al. · Materials Science in Semiconductor Processing · 2005 · 13 citations

Electrical Engineering, Engineering, Nanoelectronics +5