IEEE Transactions on Electron Devices · 1992 · 115 citations · 9 references
EngineeringElectrical EngineeringMaterials ScienceElectronic MaterialsMicroelectronicsSemiconductor DevicesDevice CharacterizationDevice ModelingDevice SimulationMetal-oxide-semiconductor Field-effect TransistorsSemiconductor Device MaterialsSemiconductor PhysicsCircuit SimulationComplementary Metal-oxide-semiconductor SimulationField-effect Transistor SimulationGate-dependent Current-voltage BehaviorMetal-oxide-semiconductor Field-effect Transistor ModelingMetal-oxide-semiconductor Field-effect Transistor Small-signal ModelsMosfet ModelingPhysics-based Device Modeling
A generalized physical model including two kinds of binding sites is presented on H/sup +/-sensitive ISFET devices. The model results in a set of equations which is introduced into a modified version of the electronic circuit simulation program SPICE. In this way, the effects induced on the device performances by varying several physico-chemical parameters are analyzed. The slope of V/sub out/ versus pH curves is predicted for SiO/sub 2/-, Al/sub 2/O/sub 3/-, and Si/sub 3/N/sub 4/-gate ISFETs. The model is then used to predict the behavior of a hypothetical, partially pH-insensitive (REFET) structure. Finally, the model is utilized to fit the slow response of the Al/sub 2/O/sub 3/-gate ISFET to a pH stop.< <ETX xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">></ETX>
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