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A generalized theory of an electrolyte-insulator-semiconductor field-effect transistor
322
Citations
24
References
1986
Year
EngineeringElectrolyte SolutionsElectrolyte ParametersSemiconductor DeviceSemiconductorsDevice ModelingSemiconductor TechnologyElectrical EngineeringPhysicsGeneralized TheorySemiconductor MaterialMicroelectronicsElectrical PropertyGate Insulator SurfaceElectronic MaterialsSurface ScienceApplied PhysicsCondensed Matter PhysicsElectrical Insulation
A model of surface ionization and complexation of surface hydroxyl groups on the gate insulator surface is adapted in conjunction with electronic device physics to arrive at a generalized theory for the current-voltage characteristics of an electrolyte-insulator-semiconductor field-effect transistor (EISFET) in electrolyte solutions. EISFET's that employ thermally grown silicon dioxide were tested in simple electrolytes that contain Na <sup xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">+</sup> , K <sup xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">+</sup> , and Li <sup xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">+</sup> ions titrated in a <tex xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">p</tex> H range from 2 to 9. Experimental results show good agreement with the theory. The model successfully explains <tex xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">p</tex> H sensitivity, as well as the ion interference effect, of the EISFET working as a <tex xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">p</tex> H sensor. From this model, it is conluded that, among all the electrolyte parameters associated with an EISFET, the surface site density of the hydroxyl groups N <inf xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">s</inf> and the separation of surface ionization constants <tex xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">\Delta pK</tex> are the primary factors to consider when employing EISFET's as <tex xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">p</tex> H sensors. For high sensitivity and good selectivity, large N <inf xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">s</inf> and small <tex xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">\Delta pK</tex> values are required.
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