Temperature dependence of 1/<i>f</i> noise in Ni/n-GaN Schottky barrier diode

Abstract

1/f noise measurements were performed on Ni/n-GaN Schottky barrier diode under forward bias over a wide temperature range from 80 to 300 K. The noise spectra exhibited frequency dependence proportional to 1/f′ with γ varying between 0.8 and 1.1 down to 1 Hz. The spectral power density of current fluctuations, SI, was found to decrease with increase in temperature. Current-voltage (I-V) characteristics of the diodes have been measured, and metal-semiconductor interface was found to be spatially inhomogeneous in the temperature range 80–300 K. The decrease in 1/f noise with increase in temperature is explained within the framework of spatial inhomogeneities model.