Ashutosh Kumar

Investigation of significantly high barrier height in Cu/GaN Schottky diode

M.O. Garg, Ashutosh Kumar, Samuthira Nagarajan et al. · AIP Advances · 2016 · 41 citations · Full text

Engineering, Electrical Engineering, Materials Science +17

Temperature dependence of 1/<i>f</i> noise in Ni/n-GaN Schottky barrier diode

Ashutosh Kumar, K. Asokan, Vibhor Kumar et al. · Journal of Applied Physics · 2012 · 38 citations

Engineering, Electrical Engineering, Materials Science +17

Effect of rapid thermal annealing on barrier height and 1/<i>f</i> noise of Ni/GaN Schottky barrier diodes

Ashutosh Kumar, M. Lätzel, Silke Christiansen et al. · Applied Physics Letters · 2015 · 35 citations · Full text

Engineering, Electrical Engineering, Materials Science +17

Influence of implanted Mg concentration on defects and Mg distribution in GaN

Ashutosh Kumar, Wei Yi, Jun Uzuhashi et al. · Journal of Applied Physics · 2020 · 27 citations · Full text

Engineering, Materials Engineering, Materials Science +16

Atomic-scale quantitative analysis of implanted Mg in annealed GaN layers on free-standing GaN substrates

Ashutosh Kumar, Jun Uzuhashi, Tadakatsu Ohkubo et al. · Journal of Applied Physics · 2019 · 26 citations

Engineering, Materials Engineering, Materials Science +17