An<i>in situ</i>investigation of electromigration in Cu nanowires

Abstract

Electromigration in copper (Cu) nanowires deposited by electron beam evaporation has been investigated using both resistance measurement and the in situ scanning electron microscopy technique. During electromigration, voids formed at the cathode end while hillocks (or extrusions) grew close to the anode end. The failure lifetimes were measured for various applied current densities and the mean temperature in the wire was estimated. Electromigration activation energies of 1.06 eV and 0.94 eV were found for the wire widths of 90 nm and 141 nm, respectively. These results suggest that the mass transport of Cu during electromigration mainly occurs along the wire surfaces. Further investigations of the Auger electron spectrum show that both Cu atoms and the surface contaminants of carbon and oxygen migrate from cathode to anode under the electrical stressing.