Applied Physics Letters · 2002 · 215 citations · 3 references
Natural SciencesElectrical EngineeringMaterials EngineeringElectronic MaterialsSemiconductor DevicesSurface ScienceCoatingsElectroless PlatingInterconnect TechnologyMetalsSurface PassivationSurface PhysicsCopper Electroless PlatingCopper InterconnectsElectroless DepositionElectromigrationElectromigration AnalysisElectromigration ReliabilityInterconnect Resistance ReductionInterface Diffusion
Electromigration in on-chip Cu interconnections with a selective electroless metal coating, CoWP, CoSnP, or Pd, on the top surface of Cu damascene lines has been investigated. The 10–20 nm thick metal cap significantly improves electromigration lifetime by providing protection against interface diffusion of Cu which has been the leading contributor to metal line failure by electromigration.
3
Electromigration path in Cu thin-film lines
C.‐K. Hu, R. Rosenberg, K. Y. Lee · Applied Physics Letters · 1999 · 329 citations
Natural Sciences, Materials Engineering, Materials Science +17