Applied Physics Letters · 2000 · 41 citations · 18 references
Natural SciencesMaterials SciencePhysicsCondensed Matter PhysicsElectronic MaterialsRecombinationDefects In Electronic MaterialsElectronic Band StructureSemiconductor DefectsSemiconductor PhysicsWide Band Gap SemiconductorsWide-bandgap SemiconductorsBand GapBand Gap EnergyDefect Energy LevelsDefect LevelsDefect Levels In Band GapsElectron Correlation EnergyElectronic Structure Of DefectsSilicon Defects
The electronic properties of the (001) Si/SiO2 Pb1 defect are the subject of considerable controversy. We present spin-dependent recombination results which indicate most strongly that the Pb1 centers have levels in the Si band gap. Our results suggest that the Pb1 correlation energy is smaller than that of the more widely studied (001) Si/SiO2 defect called Pb0.
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DENSITY OF SiO2–Si INTERFACE STATES
Peter V. Gray, D.M. Brown · Applied Physics Letters · 1966 · 406 citations · Full text
Spin-Dependent Recombination on Silicon Surface
D. Lépine · Physical review. B, Solid state · 1972 · 362 citations