IEEE Journal of Emerging and Selected Topics in Power Electronics · 2015 · 19 citations · 22 references
EngineeringElectrical EngineeringField-programmable Gate ArraysPower ElectronicsSemiconductor DevicesCurrent-voltage CharacteristicsDevice CharacterizationDevice ModelingDevice ReliabilityElectrical System DiagnosticsPower QualityExperimental DiagnosticsNondestructive TestingParasitic Inductance EffectsShort Circuit TestingShort-circuit AnalysisShort-circuit CurrentShort-circuit PowerTemperature Dependence
This paper uses a 6-kA/1.1-kV nondestructive testing system for the analysis of the short-circuit behavior of insulated-gate bipolar transistor (IGBT) power modules. A field-programmable gate array enables the definition of control signals to an accuracy of 10 ns. Multiple 1.7-kV/1-kA IGBT power modules displayed severe divergent oscillations, which were subsequently characterized. Experimental tests indicate that nonnegligible circuit stray inductance plays an important role in the divergent oscillations. In addition, the temperature dependence of the transconductance is proposed as an important element in triggering for the oscillations.
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