Growth and design of deep-UV (240–290nm) light emitting diodes using AlGaN alloys

Influence of MOVPE growth conditions on carbon and silicon concentrations in GaN

D. D. Koleske, A. E. Wickenden, R.L. Henry et al. · Journal of Crystal Growth · 2002 · 272 citations

Engineering, Materials Engineering, Materials Science +14

Intentional control of <i>n</i>-type conduction for Si-doped AlN and AlXGa1−XN (0.42⩽x&amp;lt;1)

Yoshitaka Taniyasu, Makoto Kasu, Naoki Kobayashi · Applied Physics Letters · 2002 · 217 citations

Engineering, Materials Science, Physics +17

AlN/AlGaN superlattices as dislocation filter for low-threading-dislocation thick AlGaN layers on sapphire

Hongmei Wang, Jianping Zhang, Changqing Chen et al. · Applied Physics Letters · 2002 · 187 citations

Natural Sciences, Materials Engineering, Materials Science +17

The band-gap bowing of AlxGa1−xN alloys

S. R. Lee, A. F. Wright, Mary H. Crawford et al. · Applied Physics Letters · 1999 · 184 citations

Engineering, Materials Engineering, Materials Science +15

Pendeoepitaxy of gallium nitride thin films

K. J. Linthicum, Thomas Gehrke, Darren B. Thomson et al. · Applied Physics Letters · 1999 · 178 citations

Engineering, Materials Engineering, Materials Science +17