K. J. Linthicum

High-Efficiency Envelope-Tracking W-CDMA Base-Station Amplifier Using GaN HFETs

Donald F. Kimball, Ju Seon Jeong, Chin Hsia et al. · IEEE Transactions on Microwave Theory and Techniques · 2006 · 293 citations

Electrical Engineering, Engineering, Rf Semiconductor +6

12 W/mm AlGaN–GaN HFETs on Silicon Substrates

J. W. Johnson, E. L. Piner, Andrei Vescan et al. · IEEE Electron Device Letters · 2004 · 221 citations

Wide-bandgap Semiconductor, Electrical Engineering, Electronic Devices +9

Pendeoepitaxy of gallium nitride thin films

K. J. Linthicum, Thomas Gehrke, Darren B. Thomson et al. · Applied Physics Letters · 1999 · 178 citations

Wide-bandgap Semiconductor, Aluminium Nitride, Engineering +16

Pendeo-epitaxy: A new approach for lateral growth of gallium nitride films

Tsvetanka Zheleva, Scott A. Smith, Darren B. Thomson et al. · Journal of Electronic Materials · 1999 · 160 citations

Materials Science, Engineering, Surface Science +8

Enzymatic glucose detection using ZnO nanorods on the gate region of AlGaN∕GaN high electron mobility transistors

B. S. Kang, H. T. Wang, F. Ren et al. · Applied Physics Letters · 2007 · 125 citations

Engineering, Bioelectrochemistry, Biomedical Engineering +17