Electronic properties of InGaP grown by solid-source molecular-beam epitaxy with a GaP decomposition source

Abstract

We have grown high-quality In0.48Ga0.52P layers on GaAs(001) substrates using solid-source molecular-beam epitaxy. A dimer phosphorous (P2) molecular beam was produced from a GaP decomposition source. The full width at half-maximum of the (004) double-crystal x-ray diffraction peak from a 1.7-μm-thick InGaP layer on GaAs(001) substrate was 16 arcsec, which is comparable with the smallest values ever reported. The photoluminescence linewidth at 10 K is 16 meV. Hall measurements are carried out on undoped, Si-doped, and Be-doped InGaP layers grown with a 2×1 surface reconstruction. The electron mobilities are comparable to similar InGaP/GaAs layers grown by gas-source molecular-beam epitaxy. Undoped InGaP layers grown with a 2×2 reconstruction, however, showed a high resistivity of ≥102 Ω cm at 300 K.