Physical Review Letters · 1977 · 108 citations · 8 references
EngineeringMaterials ScienceCondensed Matter PhysicsInterface ScienceSemiconductor MaterialsInterface PhysicsSemiconductor HeterostructuresSemiconductor InterfacesSemiconductor PhysicsSemiconductor SurfacesWide-bandgap SemiconductorsCharge Transfer At Semiconductor InterfacesCharge TransportInterface StatesInterfacial Electronic StructureInterfacial StatesMetal-semiconductor InterfacesPseudopotential ModelsValence Band
Self-consistent calculations allowing electron redistribution in a wide region around a Ge-GaAs(110) interface reveal six types of interface states. The charge densities and local density of states at the interface indicate Ge-Ga bonding states in the gap (but below the valence-band maximum) and a variety of other states at lower energy. Some estimates based on these pseudopotential results give information on band-edge discontinuities and the character of bonds across a nonpolar interface.
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Experiments on Ge-GaAs heterojunctions
R. L. Anderson · Solid-State Electronics · 1962 · 1.1K citations
Heterojunction band discontinuities
J. L. Shay, S. Wagner, J. C. Phillips · Applied Physics Letters · 1976 · 272 citations
A. R. Riben, D.L. Feucht · Solid-State Electronics · 1966 · 202 citations