Heterojunction band discontinuities

Abstract

The discontinuity ΔEc=0.56 eV in the conduction band edge at n-CdS/p-InP junctions is reported. This discontinuity and others are compared with photoemission data and with Van Vechten’s extension of these data to many tetrahedrally coordinated semiconductors. Agreement between measured discontinuities and theoretical predictions is very good. Predictions are made for band parameters pertinent to interfaces involving AIIBIVCV2 compounds with zinc blende, chalcopyrite, or wurtzite crystal structures.