Concepedia

Interfacial States

Interfacial States is a localized electronic state residing at the metal-semiconductor interface that arises from structural and chemical discontinuities, serving as trap or recombination centers for charge carriers and thereby influencing the electrical behavior of the contact.

352

Publications

17K

Citations

1.5K

Authors

481

Institutions

Publications per year

2017–2026

74

Parents

Publications

352

Nanoscale control of an interfacial metal–insulator transition at room temperature

Cheng Cen, Stefan Thiel, G. Hammerl et al. · Nature Materials · 2008 · 590 citations

, , +16

Unified disorder induced gap state model for insulator–semiconductor and metal–semiconductor interfaces

Hideki Hasegawa, Hideo Ohno · Journal of Vacuum Science & Technology B Microelectronics Processing and Phenomena · 1986 · 495 citations

, , +16

Interface-limited injection in amorphous organic semiconductors

Marc A. Baldo, Stephen R. Forrest · Physical review. B, Condensed matter · 2001 · 411 citations

, , +17

Interface state recombination in organic solar cells

R. A. Street, M. Schoendorf, Abhijit Roy et al. · Physical Review B · 2010 · 404 citations

, , +17

Electronic phase separation at the LaAlO3/SrTiO3 interface

Ariando Ariando, Xiao Renshaw Wang, G. Baskaran et al. · Nature Communications · 2011 · 402 citations · Full text

, , +14

1–5 of 352

Authors

1.5K

  1. VV
    V. V. Afanas’ev

    KU Leuven, Belgium

    5 publications · 258 citations

    5

    h-index

  2. CB
    C. Barret

    Université Paris-Sud, France

    5 publications · 183 citations

    5

    h-index

  3. AK
    Antoine Kahn

    Princeton University, United States

    4 publications · 258 citations

    4

    h-index

  4. IL
    I. Lindau

    Stanford University, United States

    4 publications · 108 citations

    4

    h-index

  5. NR
    Neal R. Armstrong

    University of Arizona, United States

    3 publications · 109 citations

    3

    h-index

1–5 of 1.5K

Institutions

481

  1. Centre National de la Recherche Scientifique

    Paris, France

    13 h-index

    42 publications

    1K citations

  2. Chinese Academy of Sciences

    Beijing, China

    10 h-index

    53 publications

    1.8K citations

  3. University of Cambridge

    Cambridge, United Kingdom

    10 h-index

    30 publications

    2.2K citations

  4. Princeton University

    Princeton, United States

    7 h-index

    12 publications

    1.2K citations

  5. Imperial College London

    London, United Kingdom

    7 h-index

    26 publications

    3K citations

  6. Université Paris-Sud

    Orsay, France

    6 h-index

    11 publications

    271 citations

  7. The University of Tokyo

    Tokyo, Japan

    6 h-index

    14 publications

    506 citations

  8. University of Science and Technology of China

    Hefei, China

    6 h-index

    23 publications

    821 citations

1–8 of 481

Venues

  1. Journal of Applied Physics

    23 publications · 782 citations

    17

    h-index

  2. Applied Physics Letters

    24 publications · 749 citations

    15

    h-index

  3. Surface Science

    22 publications · 538 citations

    13

    h-index

  4. Physical Review Letters

    PRL · 13 publications · 547 citations

    13

    h-index

  5. ACS Applied Materials & Interfaces

    13 publications · 552 citations

    13

    h-index

1–5