Self-Consistent Calculation of the Electronic Structure at an Abrupt GaAs-Ge Interface

Abstract

The potential, charge density, and interface states have been calculated for the ideal interface between intrinsic GaAs, terminated on a (100) Ga plane, and intrinsic Ge. The conduction band is continuous across the interface and negligible interface dipole moment is found. Fractional occupancy of the interface bonds arises via a single partially occupied band of interface states. We find that a long-range potential disturbance must occur unless interface bonds are longer than bulk bonds by about 4%.