Concepedia

Digital alloy AlAsSb/AlGaAsSb distributed Braggreflectors lattice matched to InP for 1.3 – 1.55µm wavelength range

O. Blum, I. J. Fritz, L. R. Dawson, T. J. Drummond

Electronics Letters · 1995 · 19 citations · 3 references

DOI

Concepts

Abstract

The authors report a distributed Bragg reflector (DBR) consisting of 15.5 periods of AlAsSb and AlGaAsSb digital alloy with a peak reflectivity >95% at 1.46 µm. The DBR is grown by molecular beam epitaxy on an InP substrate.

References

3

High reflectivity 1.55 μm (Al)GaAsSb/AlAsSb Bragg reflector lattice matched on InP substrates

B. Lambert, Y. Toudic, Y. Rouillard et al. · Applied Physics Letters · 1995 · 48 citations

, , +14

Highly reflective, long wavelength AlAsSb/GaAsSb distributed Bragg reflector grown by molecular beam epitaxy on InP substrates

O. Blum, I. J. Fritz, L. R. Dawson et al. · Applied Physics Letters · 1995 · 41 citations

, , +17

Chemical beam epitaxially grown InP/InGaAsP interference mirror for use near 1.55 μm wavelength

K. Tai, S. L. McCall, S. N. G. Chu et al. · Applied Physics Letters · 1987 · 33 citations

, , +11