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High reflectivity 1.55 μm (Al)GaAsSb/AlAsSb Bragg reflector lattice matched on InP substrates
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1995
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PhotonicsEngineeringInp SubstratesOptical PropertiesCrystal Growth TechnologyApplied PhysicsGaassb/alassb Bragg ReflectorsSemiconductor MaterialMolecular Beam EpitaxyEpitaxial GrowthQuarter Wavelength LayersOptoelectronicsGraded-reflectivity MirrorsCompound SemiconductorGaassb/alassb SystemHigh Reflectivity 1.55
We report the molecular beam epitaxy growth of (Al) GaAsSb/AlAsSb Bragg reflectors around the 1.55 μm wavelength region. Mirrors with 96% reflectivity have been achieved by using ten pairs of quarter wavelength layers. This demonstrates the capability of the (Al) GaAsSb/AlAsSb system to achieve efficient Bragg mirrors lattice matched to InP substrates.