Infrared study of light-induced reactivation of neutralized dopants in hydrogenated <i>n</i>-type GaAs doped with silicon

Abstract

Effects of light-induced reactivation of neutralized dopants in hydrogenated n-type silicon-doped GaAs epilayers have been investigated using infrared spectroscopy and electrical measurements as well. Photoexcitation of the passivated material has been performed over a wide wavelength domain (250 nm–1.06 μm), and the samples have been analyzed by using extensively both specular reflection and transmission infrared techniques. In all cases, the observed structural modifications have been correlated to the electrical properties evaluated by measuring sheet resistance of the material. The obtained experimental data permit a simplified analysis of the dissociation of dopant-hydrogen complexes versus the photon energy of the incident light.